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Defect analysis of (Hg0.6 Cd0.4)1-y Tey

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Abstract

The values of p-n and PHg} for metal-saturated Hg0.60}Cd0.40}Te are fit by a simple model of a non-degenerate semiconductor containing doubly-ionized native donors and acceptors, and foreign donors in the 1–4 x 1015}cm−3 range. The parameters obtained are consistent with present values for the room temperature energy gap and intrinsic carrier concentration as well as with the high degree of compensation necessary to account for the calculated ionized impurity scattering. The parameters are log10}ni} =-1118/T + 13.76+ 1.5 logT} log PHg} (int) =-4850/T + 7.926 log k1/2}s} =-4032/T + 21.52

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Authors and Affiliations

  1. Marquette University-Metallurgy and Materials Science Program, 53233, Milwaukee, WI

    R. F. Brebrick & J. P. Schwartz

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  1. R. F. Brebrick
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  2. J. P. Schwartz
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Brebrick, R.F., Schwartz, J.P. Defect analysis of (Hg0.6 Cd0.4)1-y Tey . J. Electron. Mater. 9, 485–497 (1980). https://doi.org/10.1007/BF02652931

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