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Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y

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Abstract

Hall mobility measurements for the alloy III–V quaternary material In1-x}Gax}Asy}P1-y} lattice matched to semi-insulating InP substrates are described. For samples spanning the entire compositional range, the carrier concentration varied from 0.4x1016} to 1017}cm−3 and the room temperature mobilities varied from 3800cm2}/Vsec up to 11,000cm2}/Vsec. Temperature variation of the mobility in the range from 80K to 300K was investigated for selected samples. The results demonstrate that disorder scattering makes a significant contribution to limiting the mobility for material spanning the midrange (y∼0.5).

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Authors and Affiliations

  1. Bell Telephone Laboratories, 07733, Holmdel, New Jersey

    R. F. Leheny, A. A. Ballman, J. C. DeWinter, R. E. Nahory & M. A. Pollack

Authors
  1. R. F. Leheny
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  2. A. A. Ballman
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  3. J. C. DeWinter
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  4. R. E. Nahory
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  5. M. A. Pollack
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Additional information

This work was first presented as a paper at the 21st} Electronic Materials Conference, University of Colorado, Boulder, Colorado, June 27–29, 1979.

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Leheny, R.F., Ballman, A.A., DeWinter, J.C. et al. Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y . J. Electron. Mater. 9, 561–568 (1980). https://doi.org/10.1007/BF02652936

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  • DOI: https://doi.org/10.1007/BF02652936

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