Abstract
An rf plasma system is described suitable for deposition of anisotropic SiO(in2) films capable of aligning liquid crystal cells parallel to the substrate surface at approximately zero tilt and perpendicular to the plane of incidence. The electrooptical response of twisted cells made by this technique and their ε(H) curves are discussed.
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Sprokel, G.J. Liquid crystal alignment films produced by the R.F. Plasma beam technique. J. Electron. Mater. 9, 651–667 (1980). https://doi.org/10.1007/BF02652942
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DOI: https://doi.org/10.1007/BF02652942