1. Modification of Hg_1−x Cd_xTe properties by low-energy ions

   • K. D. Mynbaev
   • V. I. Ivanov-Omskii

   Review Pages: 1127 - 1150

2. Thermodynamic stability of GaInSb, InAsSb, and GaInP epitaxial films

   • V. G. Deibuk

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1151 - 1155

3. Kinetics of ambipolar diffusion and drift currents of nonequilibrium carriers in semiconductors

   • A. A. Abdullaev
   • A. R. Aliev
   • I. K. Kamilov

   Electronic and Optical Properties of Semiconductors Pages: 1156 - 1159

4. A study of linear dichroism induced by uniaxial strain in silicon crystals

   • E. F. Venger
   • I. E. Matyash
   • B. K. Serdega

   Electronic and Optical Properties of Semiconductors Pages: 1160 - 1164

5. Photoluminescence from amorphous carbon grown by laser ablation of graphite

   • S. G. Yastrebov
   • V. I. Ivanov-Omskii
   • A. Richter

   Electronic and Optical Properties of Semiconductors Pages: 1165 - 1168

6. Photodeposition of silver at the interface of a heterojunction based on a solid electrolyte: The case of CdSe-As₂S₃:Ag_x (x=0.9–2.4) heterojunctions

   • A. I. Stetsun

   Semiconductors Structures, Interfaces, and Surfaces Pages: 1169 - 1176

7. Formation of a native-oxide structure on the surface of n-GaAs under natural oxidation in air

   • N. A. Torkhov

   Semiconductors Structures, Interfaces, and Surfaces Pages: 1177 - 1184

8. Electroluminescence in a semimetal channel at a single type II broken-gap heterointerface

   • K. D. Moiseev
   • M. P. Mikhailova
   • T. Šimeček

   Semiconductors Structures, Interfaces, and Surfaces Pages: 1185 - 1189

9. Resonance raman scattering in Ge nanoislands grown on a Si(111) substrate coated with an ultrathin SiO₂ layer

   • V. A. Volodin
   • M. D. Efremov
   • V. V. Ul’yanov

   Low-Dimensional Systems Pages: 1190 - 1194

10. Electronic absorption of surface acoustic waves by quantum rings in a magnetic field

    • V. M. Kovalev
    • A. V. Chaplik

    Low-Dimensional Systems Pages: 1195 - 1200

11. Characteristics of multiple-island single-electron chains in relation to various factors

    • I. I. Abramov
    • S. A. Ignatenko
    • E. G. Novik

    Low-Dimensional Systems Pages: 1201 - 1204

12. The X⁺ trion in a system with spatial separation of the charge carriers

    • R. A. Sergeev
    • R. A. Suris

    Low-Dimensional Systems Pages: 1205 - 1210

13. Spectral ellipsometry of amorphous hydrogenated carbon grown by magnetron sputtering of graphite

    • S. G. Yastrebov
    • M. Garriga
    • V. I. Ivanov-Omskii

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1211 - 1213

14. Transient photocurrent and photoluminescence in porous silicon

    • N. S. Averkiev
    • L. P. Kazakova
    • N. N. Smirnova

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1214 - 1216

15. Electron transport in unipolar heterostructure transistors with quantum dots in strong electric fields

    • V. G. Mokerov
    • Yu. K. Pozela
    • Yu. V. Fedorov

    Physics of Semiconductor Devices Pages: 1217 - 1221

16. Silicon-on-insulator nanotransistors: Prospects and problems of fabrication

    • O. V. Naumova
    • I. V. Antonova
    • A. L. Aseev

    Physics of Semiconductor Devices Pages: 1222 - 1228

17. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

    • E. V. Kalinina
    • G. F. Kholuyanov
    • A. Yu. Nikiforov

    Physics of Semiconductor Devices Pages: 1229 - 1233

18. Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors

    • N. A. Maleev
    • A. P. Kovsh
    • V. M. Ustinov

    Physics of Semiconductor Devices Pages: 1234 - 1238

19. Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

    • I. I. Novikov
    • M. V. Maksimov
    • D. Bimberg

    Physics of Semiconductor Devices Pages: 1239 - 1242