Abstract
The miscibility gaps and the critical temperatures of spinodal decomposition of ternary semiconducting Ga-In-Sb, Ga-In-P, and In-As-Sb systems are calculated by taking into account the deformation energy and the effect of plastic relaxation caused by the misfit dislocations. It is shown that taking into consideration elastic energy narrows the ranges of spinodal decomposition and lowers its critical temperature. The introduction of the phenomenological parameter into Matthews-Blakeslee formula makes it possible to reach a satisfactory agreement between theoretically calculated values of critical thickness of epitaxial films and the experimental data.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 10, 2003, pp. 1179–1183.
Original Russian Text Copyright © 2003 by De\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)buk.
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Deibuk, V.G. Thermodynamic stability of GaInSb, InAsSb, and GaInP epitaxial films. Semiconductors 37, 1151–1155 (2003). https://doi.org/10.1134/1.1619508
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DOI: https://doi.org/10.1134/1.1619508