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Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm

  • Physics of Semiconductor Devices
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Abstract

The temperature behavior of the operation characteristics of low-threshold (the threshold current density is below 100 A/cm2) high-efficiency (differential quantum efficiency is as high as 88%) injection laser heterostructures is studied. The active region of structures emitting in the range from 1.25 to 1.29 µm included two, five, and ten layers of InAs-GaAs quantum dots. It is shown that both the threshold current density and the external differential quantum efficiency become N-shaped functions of temperature as the distribution of carriers in the active region changes from nonequilibrium to equilibrium one.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. I. Novikov, M. V. Maksimov, Yu. M. Shernyakov, N. Yu. Gordeev, A. R. Kovsh, A. E. Zhukov, S. S. Mikhrin, N. A. Maleev, A. P. Vasil’ev, V. M. Ustinov, Zh. I. Alferov, N. N. Ledentsov & D. Bimberg

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  1. I. I. Novikov
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  2. M. V. Maksimov
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  3. Yu. M. Shernyakov
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  4. N. Yu. Gordeev
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  5. A. R. Kovsh
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  6. A. E. Zhukov
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  7. S. S. Mikhrin
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  8. N. A. Maleev
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  9. A. P. Vasil’ev
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  10. V. M. Ustinov
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  11. Zh. I. Alferov
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  12. N. N. Ledentsov
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  13. D. Bimberg
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 10, 2003, pp. 1270–1273.

Original Russian Text Copyright © 2003 by Novikov, Maksimov, Shernyakov, Gordeev, Kovsh, Zhukov, Mikhrin, Maleev, Vasil’ev, Ustinov, Alferov, Ledentsov, Bimberg.

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Novikov, I.I., Maksimov, M.V., Shernyakov, Y.M. et al. Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm. Semiconductors 37, 1239–1242 (2003). https://doi.org/10.1134/1.1619525

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  • DOI: https://doi.org/10.1134/1.1619525

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