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Modification of Hg1−x CdxTe properties by low-energy ions

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Abstract

We present an overview concerning the modification of properties of HgCdTe solid solutions and related Hg-containing materials under surface treatment with low-energy (60–2000 eV) ion beams. The conditions for conductivity-type conversion in p-material, dose, and time dependences of the depth of the conversion layer are analyzed. The modification of electrical properties of n-type material subjected to ion-beam treatment is discussed. The suggested mechanisms of conductivity-type conversion under low-energy ion treatment of HgCdTe doped with vacancies or acceptor impurities are regarded. Properties of p-n junctions produced by this technique are reviewed, and electrical and photoelectric parameters of HgCdTe IR photodetectors fabricated by low-energy ion treatment are analyzed. Several examples of novel device structures developed with the use of the method are presented.

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  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    K. D. Mynbaev & V. I. Ivanov-Omskii

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  1. K. D. Mynbaev
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  2. V. I. Ivanov-Omskii
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 10, 2003, pp. 1153–1178.

Original Russian Text Copyright © 2003 by Mynbaev, Ivanov-Omski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Mynbaev, K.D., Ivanov-Omskii, V.I. Modification of Hg1−x CdxTe properties by low-energy ions. Semiconductors 37, 1127–1150 (2003). https://doi.org/10.1134/1.1619507

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