Abstract
Germanium nanoislands formed on a Si (111) surface coated with an ultrathin oxide layer were investigated by Raman spectroscopy. For analysis of the experimental data, the spectra of real islands containing some hundreds of Ge atoms were calculated numerically. The effects of the resonance enhancement of the intensity of Raman scattering in the Ge-nanoisland-SiO2-Si system and the influence of the lateral sizes of nanoislands on the frequencies of phonons localized in them are discussed.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 10, 2003, pp. 1220–1224.
Original Russian Text Copyright © 2003 by Volodin, Efremov, Nikiforov, Orekhov, Pchelyakov, Ul’yanov.
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Volodin, V.A., Efremov, M.D., Nikiforov, A.I. et al. Resonance raman scattering in Ge nanoislands grown on a Si(111) substrate coated with an ultrathin SiO2 layer. Semiconductors 37, 1190–1194 (2003). https://doi.org/10.1134/1.1619515
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DOI: https://doi.org/10.1134/1.1619515