Abstract
Transient photocurrent in porous silicon samples subjected to prolonged storage in air has been studied using the time-of-flight technique at temperatures in the range 300–350 K and electric field strengths of 104–105 V/cm. Photoluminescence has been studied in the same samples at T=300 K using time-resolved spectroscopy. A conclusion is made on the basis of comparison of the data obtained that localized states play important part in both the processes at characteristic times of these processes falling within the microsecond range.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 10, 2003, pp. 1244–1247.
Original Russian Text Copyright © 2003 by Averkiev, Kazakova, Piryatinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Smirnova.
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Averkiev, N.S., Kazakova, L.P., Piryatinskii, Y.P. et al. Transient photocurrent and photoluminescence in porous silicon. Semiconductors 37, 1214–1216 (2003). https://doi.org/10.1134/1.1619520
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DOI: https://doi.org/10.1134/1.1619520