Abstract
A radically new method is suggested for drift mobility determination in semiconductors; this method is based on the measurement of how much time it takes to attain a peak value of the diffusion-drift current of nonequilibrium charge carriers excited by short pulses of light from a high-absorption region through the one of the contacts. The estimations show that the method is applicable if the drift flow exceeds the diffusion flow. This condition is satisfied at voltages exceeding those corresponding to the highest rate of t max(U) decay. Mobility μ can be calculated by the formula μ=d 2(2Ut max)−1, where d is the distance between contacts, U is the applied voltage, and t max is the time the peak value of the photocurrent is attained.
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A. A. Abdullaev and A. Z. Gadzhiev, Fiz. Tekh. Poluprovodn. (Leningrad) 25, 30 (1991) [Sov. Phys. Semicond. 25, 16 (1991)].
K. Seeger, Semiconductor Physics (Springer, Berlin, 1974; Mir, Moscow, 1977), p. 161.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 10, 2003, pp. 1184–1187.
Original Russian Text Copyright © 2003 by Abdullaev, Aliev, Kamilov.
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Abdullaev, A.A., Aliev, A.R. & Kamilov, I.K. Kinetics of ambipolar diffusion and drift currents of nonequilibrium carriers in semiconductors. Semiconductors 37, 1156–1159 (2003). https://doi.org/10.1134/1.1619509
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DOI: https://doi.org/10.1134/1.1619509