Abstract
Design and technology problems in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) equipped with nonconducting distributed Bragg reflectors (DBRs) and fabricated using molecular-beam epitaxy are considered. VCSELs with an active region were formed on the basis of InGaAs quantum wells and incorporated an AlGaAs/GaAs bottom DBR and an oxidized AlGaO/GaAs top DBR; the diameter of the oxidized aperture was equal to 7–12 µm. The devices exhibit a continuous-wave lasing at room temperature with threshold currents of 0.5–1.5 mA, a differential efficiency as high as 0.5 mW/mA, and a highest output power of 3 mW.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 37, No. 10, 2003, pp. 1265–1269.
Original Russian Text Copyright © 2003 by Maleev, Kovsh, Zhukov, Vasil’ev, Mikhrin, Kuz’menkov, Bedarev, Zadiranov, Kulagina, Shernyakov, Shulenkov, Bykovskii, Solov’ev, Möller, Ledentsov, Ustinov.
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Maleev, N.A., Kovsh, A.P., Zhukov, A.E. et al. Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors. Semiconductors 37, 1234–1238 (2003). https://doi.org/10.1134/1.1619524
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DOI: https://doi.org/10.1134/1.1619524