1. The scanning tunneling microscopy and scanning tunneling spectroscopy of amorphous carbon

   • V. I. Ivanov-Omskii
   • A. B. Lodygin
   • S. G. Yastrebov

   Reviews Pages: 1355 - 1362

2. Influence of Sn resonance states on the electrical homogeneity of Bi₂Te₃ single crystals

   • M. K. Zhitinskaya
   • S. A. Nemov
   • E. Müller

   Electronic and Optical Properties of Semiconductors Pages: 1363 - 1364

3. The In/PbTe barrier structures with a thin intermediate insulating layer

   • O. A. Aleksandrova
   • A. T. Akhmedzhanov
   • L. V. Yashina

   Electronic and Optical Properties of Semiconductors Pages: 1365 - 1369

4. The formation kinetics of a strongly absorbing state in a bistable excitonic noncavity system

   • Yu. V. Gudyma

   Electronic and Optical Properties of Semiconductors Pages: 1370 - 1375

5. Photoluminescence of Ga_1−x In_xAs_ySb_1−y solid solutions lattice-matched to InAs

   • K. D. Moiseev
   • A. A. Toropov
   • Yu. P. Yakovlev

   Electronic and Optical Properties of Semiconductors Pages: 1376 - 1380

6. Type II broken-gap InAs/GaIn_0.17As_0.22Sb heterostructures with abrupt planar interface

   • K. D. Moiseev
   • A. A. Sitnikova
   • Yu. P. Yakovlev

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1381 - 1385

7. Special features of alpha-particle detection with thin semi-insulating 6H-SiC films

   • N. B. Strokan
   • A. A. Lebedev
   • V. V. Kozlovskii

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1386 - 1390

8. Vibration modes of carbon in hydrogenated amorphous carbon modified with copper

   • V. I. Ivanov-Omskii
   • T. K. Zvonareva
   • G. S. Frolova

   Amorphous, Vitreous, and Porous Semiconductors Pages: 1391 - 1396

9. On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers

   • A. Yu. Leshko
   • A. V. Lyutetskii
   • N. V. Fetisova

   Physics of Semiconductor Devices Pages: 1397 - 1401

10. Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

    • N. V. Zotova
    • S. S. Kizhaev
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 1402 - 1405

11. Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasers

    • A. N. Imenkov
    • N. M. Kolchanova
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 1406 - 1409

12. Serge\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Petrovich Solov’ev (1932–2000)

    • V. N. Brudnyi
    • V. T. Bublik
    • V. A. Kharchenko

    In Memoriam Pages: 1410 - 1411