Abstract
Photoluminescence of Ga1−x In x As y Sb1−y (0.08<x<0.22) epilayers lattice-matched to InAs substrate was investigated for the first time at 80 K, and the band gap of solid solutions was evaluated experimentally. It was demonstrated that the intensity of the band-to-band radiative recombination for p-GaInAsSb undoped layers depends on the composition of the quaternary solid solution and is governed by the concentration of intrinsic structural defects. For an n-GaInAsSb:Te donor-doped layer, the band-to-band recombination band and an additional emission band were observed. The latter band is related to the radiative recombination via the deep acceptor level formed by an intrinsic complex V GaTe with the activation energy E DA =122 meV.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1432–1437.
Original Russian Text Copyright © 2000 by Moiseev, Toropov, Terent’ev, Mikha\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\)lova, Yakovlev.
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Moiseev, K.D., Toropov, A.A., Terent’ev, Y.V. et al. Photoluminescence of Ga1−x InxAsySb1−y solid solutions lattice-matched to InAs. Semiconductors 34, 1376–1380 (2000). https://doi.org/10.1134/1.1331794
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DOI: https://doi.org/10.1134/1.1331794