Abstract
The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configurations and emitted in the wavelength range from 1.26 up to 1.55 µm was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown that the heterolasers based on the laser structure with a broadened three-step waveguide have the highest quantum efficiency of stimulated radiation. In heterolasers of the suggested configuration, a decrease in the electron ejection out of the active region into the waveguide was observed. The power of the optical radiation of 4.2 W in a continuous-wave lasing mode was obtained in laser diodes with a mesa-stripe width of 100 µm. The quantum efficiency was 85% for the internal optical losses of 3.6 cm−1.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1457–1461.
Original Russian Text Copyright © 2000 by Leshko, Lyutetski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Pikhtin, Skrynnikov, Sokolova, Tarasov, Fetisova.
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Leshko, A.Y., Lyutetskii, A.V., Pikhtin, N.A. et al. On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers. Semiconductors 34, 1397–1401 (2000). https://doi.org/10.1134/1.1331798
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DOI: https://doi.org/10.1134/1.1331798