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Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy

  • Physics of Semiconductor Devices
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Abstract

InAs/InAs0.93Sb0.07/InAs heterostructures were grown by metal-organic vapor-phase epitaxy in a horizontal reactor at atmospheric pressure. Based on the obtained structures, light-emitting diodes operating at λ=3.45 µm (T=77 K) and λ=3.95 µm (T=300 K) were fabricated. The room-temperature quantum efficiency of light-emitting diodes was 0.12%.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    N. V. Zotova, S. S. Kizhaev, S. S. Molchanov, T. B. Popova & Yu. P. Yakovlev

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  1. N. V. Zotova
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  2. S. S. Kizhaev
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  3. S. S. Molchanov
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  4. T. B. Popova
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  5. Yu. P. Yakovlev
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1462–1467.

Original Russian Text Copyright © 2000 by Zotova, Kizhaev, Molchanov, Popova, Yakovlev.

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Zotova, N.V., Kizhaev, S.S., Molchanov, S.S. et al. Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxy. Semiconductors 34, 1402–1405 (2000). https://doi.org/10.1134/1.1331799

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  • DOI: https://doi.org/10.1134/1.1331799

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