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Influence of Sn resonance states on the electrical homogeneity of Bi2Te3 single crystals

  • Electronic and Optical Properties of Semiconductors
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Abstract

An unusually high homogeneity of electrical properties was found in Sn-doped Bi2Te3 single crystals. The Seebeck coefficient, which is sensitive to fluctuations in charge carrier concentration, remains unchanged even when the amount of introduced Sn impurity is increased. This fact is explained in terms of the model of resonance impurity states.

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Authors and Affiliations

  1. St. Petersburg State Technical University, Politekhnicheskaya ul. 29, St. Petersburg, 195251, Russia

    M. K. Zhitinskaya & S. A. Nemov

  2. Baikov Institute of Metallurgy, Russian Academy of Sciences, Leninskii pr. 49, Moscow, 117334, Russia

    T. E. Svechnikova

  3. Fachgruppe Angewandte Physik, Martin Luther Universität, Halle-Wittenberg, Halle (Saale), Germany

    P. Reinshaus

  4. German Aerospace Center (DLR), Institute of Materials Research, D-51170, Köln, Germany

    E. Müller

Authors
  1. M. K. Zhitinskaya
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  2. S. A. Nemov
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  3. T. E. Svechnikova
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  4. P. Reinshaus
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  5. E. Müller
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1417–1419.

Original Russian Text Copyright © 2000 by Zhitinskaya, Nemov, Svechnikova, Reinshaus, Müller.

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Zhitinskaya, M.K., Nemov, S.A., Svechnikova, T.E. et al. Influence of Sn resonance states on the electrical homogeneity of Bi2Te3 single crystals. Semiconductors 34, 1363–1364 (2000). https://doi.org/10.1134/1.1331791

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  • DOI: https://doi.org/10.1134/1.1331791

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