Abstract
A unified approach allowing the description of all formation stages of a strongly absorbing state in a bistable excitonic noncavity system as a nonequilibrium first-order phase transition is proposed. In the fast-switching-wave approximation, the switching-wave front velocity is determined, and the thickness of the phase discontinuity interface is estimated. The size distributions of subcritical and supercritical nuclei and an asymptotic expression for the nucleus radius are obtained.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1426–1431.
Original Russian Text Copyright © 2000 by Gudyma.
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Gudyma, Y.V. The formation kinetics of a strongly absorbing state in a bistable excitonic noncavity system. Semiconductors 34, 1370–1375 (2000). https://doi.org/10.1134/1.1331793
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DOI: https://doi.org/10.1134/1.1331793