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The In/PbTe barrier structures with a thin intermediate insulating layer

  • Electronic and Optical Properties of Semiconductors
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Abstract

Epitaxial n-PbTe layers were grown on BaF2 {111} single-crystal substrates by hot-wall epitaxy from the gaseous phase. These layers were kept in atmospheric air for 15–30 days, after which In and protective BaF2 layers were deposited. Current-voltage characteristics and photoelectric sensitivity spectra of the In/n-PbTe barrier structures were measured in the temperature range T=80–300 K. Based on the experimental results, a model of charge transport is suggested and the effective barrier height ϕ effb , the insulator layer thickness δ, and the surface-state density D S are determined.

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Authors and Affiliations

  1. Ul’yanov (Lenin) University of Electrical Engineering, St. Petersburg, 197376, Russia

    O. A. Aleksandrova, A. T. Akhmedzhanov, R. Ts. Bondokov, V. A. Moshnikov, I. V. Saunin & Yu. M. Tairov

  2. Moscow State University, Vorob’evy gory, Moscow, 119899, Russia

    V. I. Shtanov & L. V. Yashina

Authors
  1. O. A. Aleksandrova
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  2. A. T. Akhmedzhanov
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  3. R. Ts. Bondokov
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  4. V. A. Moshnikov
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  5. I. V. Saunin
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  6. Yu. M. Tairov
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  7. V. I. Shtanov
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  8. L. V. Yashina
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 34, No. 12, 2000, pp. 1420–1425.

Original Russian Text Copyright © 2000 by Aleksandrova, Akhmedzhanov, Bondokov, Moshnikov, Saunin, Tairov, Shtanov, Yashina.

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Aleksandrova, O.A., Akhmedzhanov, A.T., Bondokov, R.T. et al. The In/PbTe barrier structures with a thin intermediate insulating layer. Semiconductors 34, 1365–1369 (2000). https://doi.org/10.1134/1.1331792

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  • DOI: https://doi.org/10.1134/1.1331792

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