Space-charge-limited current in CuxS/CdS solar cells L. D. PartainG. A. ArmantroutPeter Warter OriginalPaper Pages: 467 - 484
Cathodoluminescence studies of the 1.4 eV bands in vapor-phape-grown CdTe C. B. Norris OriginalPaper Pages: 499 - 512
Chemical conversion of C2 F6 and uniformity of etching SiO2 in a radial flow plasma reactor Thomas M. Mayer OriginalPaper Pages: 513 - 523
A comparison of measurement techniques for determining phosphorus densities in semiconductor silicon W. Robert Thurber OriginalPaper Pages: 551 - 560
Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y R. F. LehenyA. A. BallmanM. A. Pollack OriginalPaper Pages: 561 - 568
Etching characteristics of SiO2 in CHF3 gas plasma H. ToyodaH. KomiyaH. Itakura OriginalPaper Pages: 569 - 584
Deposition of thin refractory MIS structures on InP A. ChristouW. T. Anderson OriginalPaper Pages: 585 - 600
The preparation of Gal-x Inx As by organometallic pyrolysis for homojunction LED’S J. P. NoadA. J. SpringThorpe OriginalPaper Pages: 601 - 620
Characterization of GaAs layers grown on polycrystalline GaAs by LPE and current controlled LPE A. Abul-FadlE. StefanakosJ. McPherson OriginalPaper Pages: 621 - 638
Annealing of radiation-induced positive charge in MOS devices with aluminum and polysilicon gate contacts J. M. Aitken OriginalPaper Pages: 639 - 650
Liquid crystal alignment films produced by the R.F. Plasma beam technique G. J. Sprokel OriginalPaper Pages: 651 - 667
The effects of ion implantation and pulsed electron beam anneal on Ge films grown epitaxially on ◃100▹ GaAs W. TsengH. DietrichW. T. Anderson OriginalPaper Pages: 685 - 692
