Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4 R. M. LumJ. K. KlingertL. A. Heimbrook OriginalPaper Pages: 101 - 104
Determining the [001] crystal orientation of CdTe layers grown on (001) GaAs Hadas ShtrikmanM. OronG. Cinader OriginalPaper Pages: 105 - 110
A DLTS analysis of electron and hole traps in VPE grown n-GaAs using schottky barrier diodes F. D. AuretM. NelA. W. R. Leitch OriginalPaper Pages: 111 - 113
Photoluminescence studies of heteroepitaxial gaas on si B. A. WilsonCarl E. BonnerJ. K. Klingert OriginalPaper Pages: 115 - 119
Complexing of nitrogen with carbon and oxygen in silicon: Photoluminescence studies A. DörnenR. SauerG. Pensl OriginalPaper Pages: 121 - 125
The effects of water-to-alkoxide ratio on the properties of gels and sol-gel derived high Tc ceramic superconductors S. KramerK. WuG. Kordas OriginalPaper Pages: 135 - 137
Cross-sectional TEM characterization of low temperature (750-800°C) epitaxial silicon by very low pressure (6 mTorr) chemical vapor deposition with and without plasma enhancement T. R. YewJ. H. ComfortR. Reif OriginalPaper Pages: 139 - 148
Modification of electronic and chemical structure at metal/cdte interfaces by pulsed laser annealing J. L. ShawR. E. ViturroG. Margaritondo OriginalPaper Pages: 149 - 153
Modulation spectroscopy as a tool for electronic material characterization N. BottkaD. K. GaskillR. Glosser OriginalPaper Pages: 161 - 170
A microstructural study of the thermal fatigue failures of 60sn-40Pb solder joints D. FrearD. GrivasJ. W. Morris OriginalPaper Pages: 171 - 180
Digital deep level transient spectroscopy considered for discrimination of traps closely spaced in emission coefficients in semiconductors H. K. KimT. E. SchlesingerA. G. Milnes OriginalPaper Pages: 187 - 191
Stability of metal/GaAs-lnterfaces: A phase diagram survey Rainer Schmid-Fetzer OriginalPaper Pages: 193 - 200
A sliding wafer-OMVPE scheme for fabricating subnanometer superlattices S. MinagawaS. SatohH. Kakibayashi OriginalPaper Pages: 201 - 203
