Abstract
A sliding wafer-OMVPE (Organometallic Vapor Phase Epitaxy) reactor suitable for growing superlattices is developed. The reactor is a two-channel horizontal reactor with a susceptor placed across the two channels. A slider is used to transport the substrate by sliding it along the susceptor surface from one channel to the other. This scheme makes it possible to set the temperature of the susceptor in each channel independently by utilizing the skin effect of radio wave in graphite. The performance of this scheme is demonstrated by growing a superlattice of ten periods of GaAs(3.5 Å)/AlAs(7 Å).
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Minagawa, S., Satoh, S., Nakatsuka, S. et al. A sliding wafer-OMVPE scheme for fabricating subnanometer superlattices. J. Electron. Mater. 17, 201–203 (1988). https://doi.org/10.1007/BF02652152
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DOI: https://doi.org/10.1007/BF02652152