Abstract
Electronic conduction, charge trapping and dielectric breakdown were studied on thin stacked layers of SiO2-Si3N4-SiO2 with Al or poly-Si gate on Si. Conductivity and breakdown strength are roughly the same as observed on single SiO2 films but the average dielectric constant is higher than that for SiO2. Stacks with plasma CVD SiO2 layers show somewhat poorer breakdown strengths than those with thermally grown SiO2 films. The charging behavior of the stacks is more pronounced than that of single films. Moreover, they break down at a lower total injected charge.
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Thanh, L.D., Balk Properties of thin oxide-nitride-oxide stacked films. J. Electron. Mater. 17, 155–159 (1988). https://doi.org/10.1007/BF02652146
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DOI: https://doi.org/10.1007/BF02652146