Abstract
We study interactions of nitrogen with carbon and oxygen in crystalline silicon by photoluminescence spectroscopy. Such processes manifest themselves in five photoluminescence lines in the spectral region around 1.6 μm emerging after nitrogen and carbon implantations and furnace annealing with 550° C optimum temperature. Nitrogen and carbon isotope shifts of the lines confirm the incorporation of these atomic species in the optical defects. Nitrogen-oxygen interactions are demonstrated by differences in the lines’ appearance between oxygen-lean float-zone and oxygen-rich pulled silicon starting materials. The data suggests similar basic nitrogen-carbon units in all five defects.
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Dörnen, A., Sauer, R. & Pensl, G. Complexing of nitrogen with carbon and oxygen in silicon: Photoluminescence studies. J. Electron. Mater. 17, 121–125 (1988). https://doi.org/10.1007/BF02652141
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DOI: https://doi.org/10.1007/BF02652141