Abstract
A method is presented for analysis of digitally recorded capacitance transients to give activation energies and capture cross-sections of two deep levels which would yield overlapping peaks in conventional DLTS spectra. It is shown that baseline errors can be overcome by proper analysis of the data. The accuracy of the method is examined by simulation with parameters representative of a typical DLTS system. The addition of various noise levels is also simulated and the effects of averaging of transients on the ability to discriminate closely spaced traps is examined quantitatively.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. V. Lang, J. Appl. Phys.45, 3023 (1974).
A. Le Bloa, P. N. Favennec and Y. Colin, Phys. Status Solidi(a)64, 85 (1981).
H. Nakashima, T. Miyagawa, S. Sugitani, and K. Hashimoto, Jpn. J. Appl. Phys.25, 205 (1986).
P. D. Kirchner, W. J. Schaff, G. N. Maracas, and L. F. Eastman, J. Appl. Phys.52, 6462 (1981).
P. S. Whitney, W. Lee, and C. G. Fonstad, J. Vac. Sci. Technol. B5, 796 (1987).
C. M. Ransom, T. I. Chappell, J. L. Freeouf, and P. D. Kirchner, Mat. Res. Soc. Symp. Proc.69, 337 (1986).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kim, H.K., Schlesinger, T.E. & Milnes, A.G. Digital deep level transient spectroscopy considered for discrimination of traps closely spaced in emission coefficients in semiconductors. J. Electron. Mater. 17, 187–191 (1988). https://doi.org/10.1007/BF02652150
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02652150