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A DLTS analysis of electron and hole traps in VPE grown n-GaAs using schottky barrier diodes

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Abstract

Capacitance lock-in amplifier deep level transient spectroscopy (DLTS) using Schottky barrier diodes (SBD’s) was used to characterize the electron and hole traps in VPEn-GaAs (ND - NA = 1 - 2 x 1015/cm3) layers grown on n+ (1018/cm3) GaAs substrates. The main electron traps observed were the EL2 atE c - 0.81 eV and a level atE c - 0.48 eV. The use of large forward bias electrical injection pulses (and no optical excitation) facilitated the detection of hole traps, of which the defect with an energy level atE v + 0.42 eV, speculated to be Cu-related, was present in the highest concentration.

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Authors and Affiliations

  1. Physics Department, University of Port Elizabeth, PO Box 1600, 6000, Port Elizabeth, South Africa

    F. D. Auret, M. Nel & A. W. R. Leitch

Authors
  1. F. D. Auret
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  2. M. Nel
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  3. A. W. R. Leitch
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Auret, F.D., Nel, M. & Leitch, A.W.R. A DLTS analysis of electron and hole traps in VPE grown n-GaAs using schottky barrier diodes. J. Electron. Mater. 17, 111–113 (1988). https://doi.org/10.1007/BF02652139

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  • DOI: https://doi.org/10.1007/BF02652139

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