Abstract
Modulation spectroscopy is an optical characterization tool that can be of great utility to the materials scientist. We present here numerous examples where a simple photo-reflectance and electroreflectance setup is used in our laboratory to determine such important material parameters as alloy composition and carrier concentration in a very short time. For determining alloy composition in semiconductors, contactless room temperature photoreflectance is nearly as sensitive as low temperature photoluminescence. Examples will be given on how to determine: the effects of surface preparation and implant damage; alloy composition and carrier homogeneity for large area wafers to better than 1%; the segregation coefficient of isoelectronic impurities in bulk semiconductors; the sub-band energies in quantum well structures; and the presence and homogeneity of built-in electric fields in MODFET structures. Particular emphasis will be placed on band edge and exciton effects on the photoreflectance and on the criteria used to distinguish between them. Materials studied included Si doped GaAs, AlxGa1-xAs for variousx grown by OMVPE and MBE, bulk InP doped with iso-electronic As and Sb, and MODFET structures.
Similar content being viewed by others
References
M. Cardona, “Solid State Physics,” Suppl. 11, edited by F. Scitz, D. Turnbull, and H. Ehrenreich (Academic, New York 1969).
“Semiconductors and Semimetals” edited by R. L. Willardson and A. C. Beer (Academic, New York, 1972, Vol. 9).
Proc. of the First Int. Conf. on Modulation Spectroscopy, 1972 [Surface Science37 (1973)].
D. E. Aspnes in “Handbook on Semiconductors,” Vol. 2 on “Optical Properties of Solids” edited by M. Balkanski, (North-Holland, New York 1980).
E. Y. Wang and W. A. Albers, Phys. Lett.27A, 347 (1968).
R. E. Nahory and J. L. Shay, Phys. Rev. Lett.21, 1569 (1968).
D. E. Aspnes, Solid State Commun.8, 267 (1970).
J. G. Gay, Phys. Rev.B4, 2567 (1971).
O. J. Glembocki, B. V. Shanabrook, N. Bottka, W. T. Beard, and J. Comas, Appl. Phys. Lett.46, 970 (1985); and SPIE524, 86 (1985).
L. V. Keldysh, Sov. Phys.-JETP7, 788 (1958).
W. Franz, Z. Naturforsch.13, 484 (1958).
D. Redfield, Phys. Rev.130, 914 (1963).
D. Redfield and M. A. Afromowitz, Appl. Phys. Lett.11, 138 (1967).
B. O. Seraphin and N. Bottka, Phys. Rev.139, A560 (1965).
D. E. Aspnes, Proc. First Int. Conf. on Modulation Spectroscopy, 1972. [Surf. Sci. 37, 418 (1973)].
D. E. Aspnes and A. A. Studna, Phys. Rev.B7, 4605 (1973).
S. M. Sze inPhysics of Semiconductor Devices (John Wiley and Sons, New York, 1981).
R. Glosser and N. Bottka, SPIE794, 14 (1987).
J. D. Dow, Surf. Sci.37, 786 (1973).
D. F. Blossey and P. Handler, in “Semiconductors and Semimetals,” edited by R. L. Willardson and A. C. Beer (Academic, New York 1972), Vol. 9.
F. Evangelisti, A. Frova, and J. U. Fischbach, Phys. Rev. Lett.29, 1001 (1972).
F. Evangelisti, J. U. Fischbach, and A. Frova, Phys. Rev.B9, 1516 (1974).
E. Y. Wang, Phys. Rev. Lett.23, 410 (1969).
E. E. Mendez, L. L. Chang, B. Landgren, R. Ludeke, L. Esaki, and F. H. Pollak, Phys. Rev. Lett.46, 1230 (1981).
O. J. Glembocki, N. Bottka, and J. E. Furneaux, J. Appl. Phys.57, 432 (1985).
N. Bottka and M. E. Hills, SPIE276, 157 (1981).
D. K. Gaskill, N. Bottka, and R. S. Sillmon, Electronic Materials Conference, Santa Barbara, CA, June 24–26, 1987.
R. Sittig, Surf. Sci.37, 987 (1973).
C. Weisbuch, R. C. Miller, R. Dingle, A. C. Gossard, and W. Wiegmann, Solid State Commun.37, 219 (1981).
B. V. Shanabrook, O. J. Glembocki, and W. T. Beard, Phys. Rev.B35, 2540 (1987).
G. D. Sanders and K. K. Bajaj, Phys. Rev.B35, 2308 (1987).
O. J. Glembocki and B. V. Shanabrook, Superlattices and Microstructures3, 235 (1987).
P. Parayanthal, H. Shen, Fred H. Pollak, O. J. Glembocki, B. V. Shanabrook and W. T. Beard, Appl. Phys. Lett.48,1261 (1986).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Bottka, N., Gaskill, D.K., Sillmon, R.S. et al. Modulation spectroscopy as a tool for electronic material characterization. J. Electron. Mater. 17, 161–170 (1988). https://doi.org/10.1007/BF02652147
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02652147