Abstract
We discuss various possibilities for determining the orientation of CdTe layers grown on (001) GaAs and in particular, determining the (001) orientation. This growth orientation is characterized by a three dimensional growth mechanism which controls the growth in the (111) orientation. We show that a thin layer of ZnTe deposited directly on the oxide free GaAs surface can be used to determine the (001) orientation, eliminate (111) phases and enhance a two dimensional growth of the CdTe layer, resulting in an improved crystalline quality and a smooth surface morphology. CdTe layers grown in the (111) direction on oxide free (001) GaAs substrates contain (111) microtwins and an intermixed (001) phase.
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Had it been solely the Te which deposits on the surface during the preheating stage, we should have been able to repeat the same results when using residual CdTe rather than residual ZnTe (which was not the case).
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This work is a part of a Ph.D. thesis to be submitted to the Weizmann Institute of Science.
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Shtrikman, H., Oron, M., Raizman, A. et al. Determining the [001] crystal orientation of CdTe layers grown on (001) GaAs. J. Electron. Mater. 17, 105–110 (1988). https://doi.org/10.1007/BF02652138
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DOI: https://doi.org/10.1007/BF02652138