Modification of Hg1−x CdxTe properties by low-energy ions K. D. MynbaevV. I. Ivanov-Omskii Review Pages: 1127 - 1150
Thermodynamic stability of GaInSb, InAsSb, and GaInP epitaxial films V. G. Deibuk Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1151 - 1155
Kinetics of ambipolar diffusion and drift currents of nonequilibrium carriers in semiconductors A. A. AbdullaevA. R. AlievI. K. Kamilov Electronic and Optical Properties of Semiconductors Pages: 1156 - 1159
A study of linear dichroism induced by uniaxial strain in silicon crystals E. F. VengerI. E. MatyashB. K. Serdega Electronic and Optical Properties of Semiconductors Pages: 1160 - 1164
Photoluminescence from amorphous carbon grown by laser ablation of graphite S. G. YastrebovV. I. Ivanov-OmskiiA. Richter Electronic and Optical Properties of Semiconductors Pages: 1165 - 1168
Photodeposition of silver at the interface of a heterojunction based on a solid electrolyte: The case of CdSe-As2S3:Agx (x=0.9–2.4) heterojunctions A. I. Stetsun Semiconductors Structures, Interfaces, and Surfaces Pages: 1169 - 1176
Formation of a native-oxide structure on the surface of n-GaAs under natural oxidation in air N. A. Torkhov Semiconductors Structures, Interfaces, and Surfaces Pages: 1177 - 1184
Electroluminescence in a semimetal channel at a single type II broken-gap heterointerface K. D. MoiseevM. P. MikhailovaT. Šimeček Semiconductors Structures, Interfaces, and Surfaces Pages: 1185 - 1189
Resonance raman scattering in Ge nanoislands grown on a Si(111) substrate coated with an ultrathin SiO2 layer V. A. VolodinM. D. EfremovV. V. Ul’yanov Low-Dimensional Systems Pages: 1190 - 1194
Electronic absorption of surface acoustic waves by quantum rings in a magnetic field V. M. KovalevA. V. Chaplik Low-Dimensional Systems Pages: 1195 - 1200
Characteristics of multiple-island single-electron chains in relation to various factors I. I. AbramovS. A. IgnatenkoE. G. Novik Low-Dimensional Systems Pages: 1201 - 1204
The X+ trion in a system with spatial separation of the charge carriers R. A. SergeevR. A. Suris Low-Dimensional Systems Pages: 1205 - 1210
Spectral ellipsometry of amorphous hydrogenated carbon grown by magnetron sputtering of graphite S. G. YastrebovM. GarrigaV. I. Ivanov-Omskii Amorphous, Vitreous, and Porous Semiconductors Pages: 1211 - 1213
Transient photocurrent and photoluminescence in porous silicon N. S. AverkievL. P. KazakovaN. N. Smirnova Amorphous, Vitreous, and Porous Semiconductors Pages: 1214 - 1216
Electron transport in unipolar heterostructure transistors with quantum dots in strong electric fields V. G. MokerovYu. K. PozelaYu. V. Fedorov Physics of Semiconductor Devices Pages: 1217 - 1221
Silicon-on-insulator nanotransistors: Prospects and problems of fabrication O. V. NaumovaI. V. AntonovaA. L. Aseev Physics of Semiconductor Devices Pages: 1222 - 1228
Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers E. V. KalininaG. F. KholuyanovA. Yu. Nikiforov Physics of Semiconductor Devices Pages: 1229 - 1233
Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors N. A. MaleevA. P. KovshV. M. Ustinov Physics of Semiconductor Devices Pages: 1234 - 1238
Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm I. I. NovikovM. V. MaksimovD. Bimberg Physics of Semiconductor Devices Pages: 1239 - 1242
