Magnetism in SiC implanted with high doses of Fe and Mn S. J. PeartonK. P. LeeJ. M. Zavada Special Issue Paper Pages: 336 - 339
Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide S. -K. LeeS. -M. KooM. Östling Special Issue Paper Pages: 340 - 345
A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation G. KatulkaK. J. RoeR. Messham Special Issue Paper Pages: 346 - 350
Interactions between intrinsic defects and nitrogen/boron impurities in high-resistivity 4H SiC: Electron paramagnetic resonance study V. V. KonovalovM. E. Zvanut Special Issue Paper Pages: 351 - 355
Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs K. ChattyT. P. ChowD. Alok Special Issue Paper Pages: 356 - 360
Growth and doping of SiC-thin films on low-stress, amorphous Si3N4/Si substrates for robust microelectromechanical systems applications L. ChengM. PanA. J. Steckl Special Issue Paper Pages: 361 - 365
High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method J. R. JennySt G. MüllerC. H. Carter Jr. Special Issue Paper Pages: 366 - 369
Stacking-fault formation and propagation in 4H-SiC PiN diodes R. E. StahlbushM. FatemiS. Wang Special Issue Paper Pages: 370 - 375
Surface morphology of 6H-SiC after thermal diffusion Ying GaoS. I. SolovievT. S. Sudarshan Special Issue Paper Pages: 376 - 379
Effect of hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces J. T. WolanB. A. GraysonS. E. Saddow Special Issue Paper Pages: 380 - 383
Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering A. Y. PolyakovN. B. SmirnovR. G. Wilson Special Issue Paper Pages: 384 - 390
Transmission electron microscopy characterization of GaN nanowires Z. Liliental-WeberY. H. GaoY. Bando Special Issue Paper Pages: 391 - 394
Metal-organic vapor phase epitaxy growth and characterization of AlN/GaN heterostructures S. M. HubbardD. PavlidisA. Eisenbach Special Issue Paper Pages: 395 - 401
Acid etching for accurate determination of dislocation density in GaN Xueping XuR. P. VaudoG. R. Brandes Special Issue Paper Pages: 402 - 405
GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition Ting Gang ZhuUttiya ChowdhuryRussell D. Dupuis Special Issue Paper Pages: 406 - 410
Magnetic effects of direct ion implantation of Mn and Fe into p-GaN K. P. LeeS. J. PeartonJ. M. Zavada Special Issue Paper Pages: 411 - 415
Novel type of ohmic contacts to p-doped GaN using polarization fields in thin InxGa1−xN capping layers Th. GessmannY. -L. LiJ. K. Sheu Special Issue Paper Pages: 416 - 420
Maskless pendeo-epitaxial growth of GaN films A. M. RoskowskiE. A. PrebleR. F. Davis Special Issue Paper Pages: 421 - 428
Extended defects and polarity of hydride vapor phase epitaxy GaN J. JasinskiZ. Liliental-Weber Special Issue Paper Pages: 429 - 436
High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors B. LuoJ. W. JohnsonA. G. Baca Special Issue Paper Pages: 437 - 441
Creep behavior of eutectic Sn-Cu lead-free solder alloy C. M. L. WuM. L. Huang Special Issue Paper Pages: 442 - 448
A study of moisture diffusion in plastic packaging Xia CaiWeidong HuangZhaonian Cheng Special Issue Paper Pages: 449 - 455
Low-cycle fatigue behavior of Sn-Ag, Sn-Ag-Cu, and Sn-Ag-Cu-Bi lead-free solders Chaosuan KanchanomaiYukio MiyashitaYoshiharu Mutoh Special Issue Paper Pages: 456 - 465
The role of nucleation and heteroepitaxial processes in nanostructuring of Si E. A. GuliantsC. JiW. A. Anderson Special Issue Paper Pages: 466 - 471
Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2 Wen-Li SungBi-Shiou Chiou Special Issue Paper Pages: 472 - 477
Under bump metallurgy study for Pb-free bumping Se-Young JangJuergen WolfKyung-Wook Paik Special Issue Paper Pages: 478 - 487
Intermetallic compounds formed at the interface between liquid indium and copper substrates C. L. YuS. S. WangT. H. Chuang Special Issue Paper Pages: 488 - 493
Intermetallic compounds formed during interfacial reactions between liquid Sn-8Zn-3Bi solders and Ni substrates M. Y. ChiuS. S. WangT. H. Chuang Special Issue Paper Pages: 494 - 499
Interfacial reactions and electrical properties of Hf/p-Si0.85Ge0.15 Ming-Shaw ChungMing-Jun WangY. K. Fang Special Issue Paper Pages: 500 - 505
Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide T. JangJ. W. EricksonL. M. Porter Special Issue Paper Pages: 506 - 511
Gate-planarized organic polymer thin film transistors Sandrine MartinJeong-Yeop NahmJerzy Kanicki Special Issue Paper Pages: 512 - 519
Studies of electroless nickel under bump metallurgy—Solder interfacial reactions and their effects on flip chip solder joint reliability Young-Doo JeonKyung-Wook PaikChul-Lae Cho Special Issue Paper Pages: 520 - 528
A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure Y. S. LimJ. S. JeongD. W. Moon Special Issue Paper Pages: 529 - 534
Electronic applications of flexible graphite Xiangcheng LuoRandy ChughD. D. L. Chung Special Issue Paper Pages: 535 - 544
Mechanism of fillet lifting in Sn-Bi alloys W. J. BoettingerC. A. HandwerkerJ. M. Nicholson Special Issue Paper Pages: 545 - 550
