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Maskless pendeo-epitaxial growth of GaN films

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Abstract

High-resolution x-ray diffraction (XRD) and atomic force microscopy (AFM) of pendeo-epitaxial (PE) GaN films confirmed transmission electron microscopy (TEM) results regarding the reduction in dislocations in the wings. Wing tilt ≤0.15° was due to tensile stresses in the stripes induced by thermal expansion mismatch between the GaN and the SiC substrate. A strong D°X peak at ≈3.466 eV (full-width half-maximum (FWHM) ≤300 µeV) was measured in the wing material. Films grown at 1020°C exhibited similar vertical [0001] and lateral [11\(\bar 2\)0] growth rates. Increasing the temperature increased the latter due to the higher thermal stability of the GaN(11\(\bar 2\)0). The (11\(\bar 2\)0) surface was atomically smooth under all growth conditions with a root mean square (RMS)=0.17 nm.

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Authors and Affiliations

  1. Department of Chemical Engineering, North Carolina State University, 27695-7919, Raleigh, NC

    A. M. Roskowski

  2. Department of Materials Science and Engineering, North Carolina State University, USA

    E. A. Preble, S. Einfeldt, P. M. Miraglia & R. F. Davis

  3. Institute of Solid State Physics, University of Bremen, 28334, Bremen, Germany

    S. Einfeldt

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  1. A. M. Roskowski
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  5. R. F. Davis
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Roskowski, A.M., Preble, E.A., Einfeldt, S. et al. Maskless pendeo-epitaxial growth of GaN films. J. Electron. Mater. 31, 421–428 (2002). https://doi.org/10.1007/s11664-002-0095-6

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