Abstract
We report in this paper the fabrication and characterization of a new gate-planarized organic polymer thin-film transistor (GP OP-TFT). We describe in detail the effects of the measurement procedure on the GP OP-TFT electrical characteristics and extracted parameters and show that it is extremely critical to carefully control the electrical measurement conditions to obtain accurate and meaningful results, before any material optimization is undertaken. We also describe the importance of normalization of electrical characteristics and extracted parameters for a proper comparison of different devices. Finally, we report and analyze the gate voltage and channel length dependence of the TFT field-effect mobility.
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Martin, S., Nahm, JY. & Kanicki, J. Gate-planarized organic polymer thin film transistors. J. Electron. Mater. 31, 512–519 (2002). https://doi.org/10.1007/s11664-002-0108-5
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DOI: https://doi.org/10.1007/s11664-002-0108-5