1. Foreword

   • Mike Tischler
   • Kurt Gaskill

   EditorialNotes Pages: 1369 - 1369

2. Atomic force microscopy studies of CdTe films grown by epitaxial lateral overgrowth

   • R. Zhang
   • I. Bhat

   Special Issue Paper Pages: 1370 - 1375

3. In-situ monitoring of the growth of Bi₂ Te₂ and Sb₂ Te₃ films and Bi₂ Te₃-Sb₂ Te₃ superlattice using spectroscopic ellipsometry

   • Hao Cui
   • Ishwara Bhat
   • Rama Venkatasubramanian

   Special Issue Paper Pages: 1376 - 1381

4. OMVPE growth of P-type GaN using solution Cp₂Mg

   • Yundong Qi
   • Charles Musante
   • Ravi Kanjolia

   Special Issue Paper Pages: 1382 - 1386

5. Alternative boron precursors for BGaAs epitaxy

   • J. F. Geisz
   • D. J. Friedman
   • G. Barber

   Special Issue Paper Pages: 1387 - 1391

6. Effect of substrate orientation on phase separation in epitaxial GaInAsSb

   • C. A. Wang
   • D. R. Calawa
   • C. J. Vineis

   Special Issue Paper Pages: 1392 - 1396

7. On the suitability of getter-purified hydrogen for the LP-MOVPE of (AlGa)As: A comparison to Pd-diffused hydrogen

   • H. Hardtdegen
   • r. Schmidt
   • G. Vergani

   Special Issue Paper Pages: 1397 - 1401

8. In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

   • Yoshitaka Taniyasu
   • Akihiko Yoshikawa

   Special Issue Paper Pages: 1402 - 1407

9. Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor

   • A. J. Blattner
   • J. Lensch
   • B. W. Wessels

   Special Issue Paper Pages: 1408 - 1411

10. In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE

    • O. J. Pitts
    • S. P. Watkins
    • M. L. W. Thewalt

    Special Issue Paper Pages: 1412 - 1416

11. Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer

    • E. D. Bourret-Courchesne
    • K. M. Yu
    • J. Washburn

    Special Issue Paper Pages: 1417 - 1420

12. Influence of oxygen in AlGaAs-based laser structures with Al-Free active region on device properties

    • A. Knauer
    • H. Wenzel
    • M. Weyers

    Special Issue Paper Pages: 1421 - 1424

13. In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K

    • T. Hannappel
    • L. Töben
    • F. Willig

    Special Issue Paper Pages: 1425 - 1428

14. P-type carbon doping of GaSb

    • R. Wiersma
    • J. A. H. Stotz
    • S. P. Watkins

    Special Issue Paper Pages: 1429 - 1432

15. Purification of dialkylzinc precursors using tertiary amine ligands

    • L. M. Smith
    • K. M. Coward
    • J. S. Roberts

    Special Issue Paper Pages: 1433 - 1437

16. Impurities in hydride gases part 1: Investigation of trace moisture in the liquid and vapor phase of ultra-pure ammonia by FTIR spectroscopy

    • Hans H. Funke
    • Mark W. Raynor
    • Virginia H. Houlding

    Special Issue Paper Pages: 1438 - 1447

17. Cement-based controlled electrical resistivity materials

    • Sihai Wen
    • D. D. L. Chung

    Special Issue Paper Pages: 1448 - 1451

18. Interdiffusion analysis of the soldering reactions in Sn-3.5Ag/Cu couples

    • K. S. Bae
    • S. J. Kim

    Regular Issue Paper Pages: 1452 - 1457

19. Low-temperature air-fireable glass-free metallic thick-film electrical conductor materials

    • Zongrong Liu
    • D. D. L. Chung

    Regular Issue Paper Pages: 1458 - 1465

20. The influence of high-temperature annealing on SiC schottky diode characteristics

    • Q. Zhang
    • T. S. Sudarshan

    Regular Issue Paper Pages: 1466 - 1470

21. Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding

    • N. Quitoriano
    • W. S. Wong
    • T. Sands

    Regular Issue Paper Pages: 1471 - 1475

22. Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Re

    • D. Söderström
    • S. Lourdudoss
    • H. Schumann

    Erratum Pages: 1476 - 1476