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Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding

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Abstract

The kinetic behavior of the Pd/In bilayer reaction is analyzed, with emphasis on the effect of nanometer-scale diffusion barriers at the Pd/In interface. It is shown that the Pd/In reaction proceeds rapidly and without a discernable incubation period at temperatures below 200 C if the Pd/In interface is nominally free of either contamination or intentionally-deposited intervening layers. Air exposure of the Pd surface prior to In deposition is sufficient to delay the onset of the reaction to produce the intermetallic phase by PdIn3 for several minutes at 200 C. This incubation period can be further controlled by deposition of a nanometer-scale Ti layer onto the Pd prior to air exposure and In deposition. The implications of these results for the design of transient-liquid-phase waferbonding processes based on Pd−In are discussed.

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Author notes

  1. N. Quitoriano

    Present address: Department of Materials Science & Engineering, Massachusetts Institute of Technology, 02139, Cambridge, MA

  2. W. S. Wong

    Present address: Xerox Palo Alto Research Center, 94304, Palo Alto, CA

  3. L. Tsakalakos

    Present address: General Electric Corporate Research and Development, 12309, Niskayuna, NY

Authors and Affiliations

  1. Department of Materials Science & Engineering, University of California at Berkeley, 94720-1760, Berkeley, CA

    N. Quitoriano, W. S. Wong, L. Tsakalakos, Y. Cho & T. Sands

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  1. N. Quitoriano
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  2. W. S. Wong
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  3. L. Tsakalakos
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  4. Y. Cho
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  5. T. Sands
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Quitoriano, N., Wong, W.S., Tsakalakos, L. et al. Kinetics of the Pd/In thin-film bilayer reaction: Implications for transient-liquid-phase wafer bonding. J. Electron. Mater. 30, 1471–1475 (2001). https://doi.org/10.1007/s11664-001-0204-y

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  • DOI: https://doi.org/10.1007/s11664-001-0204-y

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