Abstract
Bis(cyclopentadienyl)magnesium (Cp2Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these problems can be alleviated by a newly developed source-solution magnesocene, Cp2Mg, dissolved in a solvent that is essentially nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp2Mg. Using both sources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 1018/cm3.
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Qi, Y., Musante, C., Lau, K.M. et al. OMVPE growth of P-type GaN using solution Cp2Mg. J. Electron. Mater. 30, 1382–1386 (2001). https://doi.org/10.1007/s11664-001-0187-8
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DOI: https://doi.org/10.1007/s11664-001-0187-8