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Effect of substrate orientation on phase separation in epitaxial GaInAsSb

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Abstract

The effect of substrate misorientation on phase separation in Ga1−xInxAsySb1−y nominally lattice matched to GaSb is reported. The layers were grown at 575°C by organometallic vapor phase epitaxy on vicinal (001) GaSb substrates, miscut \(2^o \to (\bar 1\bar 11)A, (1\bar 11)B,\) or (101). Ga1−xInxAsySb1−y (x ~ 0.1, ~ 0.09) layers, which have 300-K photoluminescence (PL) peak emission at ~2.1 μm, grow stepbunched and exhibit minimal phase separation. The full width at half maximum of 4-K PL spectra is slightly smaller at 7 meV for layers grown on substrates miscut toward \((1\bar 11)B\) compared to 9 meV for layers grown on substrates miscut toward \((\bar 1\bar 11)A\) and (101). Ga1−xInxAsySb1−y layers with higher alloy composition (0.16≤x≤0.19, 0.14≤y≤0.17), which have 300-K PL peak emission at ~2.4 μm, have significant phase separation. These layers are characterized by increased lattice constant variations and epitaxial tilt, broad PL spectra with significant band tailing, and strong contrast modulation in transmission electron microscopy. The degree of decomposition depends on substrate miscut direction: Ga1−xInxAsySb1−y layers grown on (001) \(2^o \to (1\bar 11)B\) substrates are more homogeneous than those grown on (001) \(2^o \to (\bar 1\bar 11)A\) and (001)2°→(101) substrates. The results are attributed to the smaller adatom diffusion length on substrates miscut toward \((1\bar 11)B\).

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  1. Lincoln Laboratory, Massachusetts Institute of Technology, 02420-9108, Lexington, MA

    C. A. Wang, D. R. Calawa & C. J. Vineis

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  1. C. A. Wang
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  2. D. R. Calawa
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  3. C. J. Vineis
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Wang, C.A., Calawa, D.R. & Vineis, C.J. Effect of substrate orientation on phase separation in epitaxial GaInAsSb. J. Electron. Mater. 30, 1392–1396 (2001). https://doi.org/10.1007/s11664-001-0189-6

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  • DOI: https://doi.org/10.1007/s11664-001-0189-6

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