The application of rapid thermal processing technology to the manufacture of integrated circuits—An overview Alan Bratschun Special Issue Paper Pages: 1328 - 1332
Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions Aditya AgarwalHans-J. GossmannAnthony T. Fiory Special Issue Paper Pages: 1333 - 1339
Effects of “fast” rapid thermal anneals on sub-keV boron and BF2 ion implants Daniel F. DowneyScott W. FalkSteven D. Marcus Special Issue Paper Pages: 1340 - 1344
Thermal activation of shallow boron-ion implants A. T. FioryK. K. Bourdelle Special Issue Paper Pages: 1345 - 1352
Secondary defect profile related to low energy implanted boron measured up to 3.5 µm depth into Si-substrates L. SolimanM. BenzohraM. Ketata Special Issue Paper Pages: 1353 - 1357
The influence of vapor phase cleaning on the composition and the surface roughness of rapid thermal oxides and nitrided oxides N. SacherB. FroeschleF. Glowacki Special Issue Paper Pages: 1365 - 1369
Temperature Uniformity Optimization for a silicon implant anneal into GaAs using Opus ™ simulation software Zaid FarukhiHelmut FranczMartin Drechsler Special Issue Paper Pages: 1370 - 1375
Wafer temperature measurement in a rapid thermal processor with modulated lamp power B. NguyenphuA. T. Fiory Special Issue Paper Pages: 1376 - 1384
Calculation of emissivity of Si wafers Bhushan SoporiWei ChenN. M. Ravindra Special Issue Paper Pages: 1385 - 1389
Evidence from spectral emissometry for conduction intraband transitions in the intrinsic regime for silicon S. AbedrabboJ. C. HenselN. M. Ravindra Special Issue Paper Pages: 1390 - 1393
A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing S. VenkataramanR. SinghA. Ebong Special Issue Paper Pages: 1394 - 1398
The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films J. O. OlowolafeI. RauT. Alford Special Issue Paper Pages: 1399 - 1402
Optical properties of CdSxTe1−x polycrystalline thin films D. A. WoodD. W. LaneJ. A. Coath Special Issue Paper Pages: 1403 - 1408
Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off W. S. WongA. B. WengrowT. Sands Special Issue Paper Pages: 1409 - 1413
Preparation and properties of Ta2O5 film capacitors using TiSi2 bottom electrode H. -S. YangY. S. ChoiS. M. Cho Special Issue Paper Pages: 1414 - 1419
Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process Oliver BreitschädelBertram KuhnHeinz Schweizer Special Issue Paper Pages: 1420 - 1423
Growth and photoreflectance characterization of GaAs impact ionization avalanche transit time diodes D. K. GaskillO. J. GlembockiA. Giordana Special Issue Paper Pages: 1424 - 1427
Optimized electrolyte for electrochemical capacitance-voltage profiling of carrier concentration in In0.49Ga0.51P A. Da Silva FilhoN. C. Frateschi Special Issue Paper Pages: 1428 - 1432
Zinc diffusion in InAsP/InGaAs heterostructures Martin H. EttenbergMichael J. LangeGregory H. Olsen Special Issue Paper Pages: 1433 - 1439
The behavior of Ni/Au contacts under rapid thermal annealing in GaN device structures F. HuetM-A. Di Forte-PoissonJ. Di Persio Special Issue Paper Pages: 1440 - 1443
Final polishing of Ga-polar GaN substrates using reactive ion etching F. KaroutaJ. L. WeyherL. M. F. Kaufmann Special Issue Paper Pages: 1448 - 1451
Optical characterization of hydrogenated amorphous silicon thin films deposited at high rate S. H. LinY. C. ChanY. W. Lam Special Issue Paper Pages: 1452 - 1456
Microstructure and corrosion resistance of room-temperature RF sputtered Ta2O5 thin films A. K. ChuM. J. ChuangE. K. Lin Special Issue Paper Pages: 1457 - 1460
Characterization of amorphous Ni-Si binary alloy films by flash evaporation Jun-Ichi KodamaTakefumi TsuboiNobuo Okamoto Special Issue Paper Pages: 1461 - 1465
Photoluminescence of Be implanted Si-doped GaAs R. E. KroonJ. R. BothaT. J. Drummond Special Issue Paper Pages: 1466 - 1470
Highly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films Nae-in LeeJin-Woo LeeChul-Hi Han Letter Pages: L31 - L33
Valence band discontinuity of the (0001) 2H-GaN / (111) 3C-SiC interface S. W. KingR. F. DavisR. J. Nemanich Letter Pages: L34 - L37
Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor W. D. SunFred H. PollakGodfrey Gumbs Letter Pages: L38 - L41
Shape stabilization and size equalization of InGaAs self-organized quantum dots Qianghua XieJ. L. BrownJ. E. Van Nostrand Letter Pages: L42 - L45
