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Zinc diffusion in InAsP/InGaAs heterostructures

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Abstract

A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In0.53Ga0.47As, In0.70Ga0.30As, In0.82Ga0.18As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniques, electrochemical profiling, and secondary ion mass spectroscopy. The diffusion coefficients, \(D = D_o e^{ - E_a /kT} \), were derived. For InP, D0=4.82 × 10−2cm2/sec and Ea=1.63 eV and for In0.53Ga0.47As, D0=2.02 × 104cm2/sec and Ea=2.63 eV. Diffusion into the heteroepitaxial structures used in the fabrication of planar PIN photodiodes is dominated by the effects of the InP/InGaAs interface.

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Authors and Affiliations

  1. Sensors Unlimited, Inc., 3490 U.S. Route 1, 08540, Princeton, NJ

    Martin H. Ettenberg, Michael J. Lange, Alan R. Sugg, Marshall J. Cohen & Gregory H. Olsen

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  1. Martin H. Ettenberg
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  2. Michael J. Lange
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  3. Alan R. Sugg
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  4. Marshall J. Cohen
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  5. Gregory H. Olsen
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Ettenberg, M.H., Lange, M.J., Sugg, A.R. et al. Zinc diffusion in InAsP/InGaAs heterostructures. J. Electron. Mater. 28, 1433–1439 (1999). https://doi.org/10.1007/s11664-999-0136-5

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  • DOI: https://doi.org/10.1007/s11664-999-0136-5

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