Abstract
Opus ™, which stands for “Optimized Uniformity Simulator”, has been described in the literature as a powerful tool to assist in the optimization of temperature uniformity in the STEAG Electronic Systems series of rapid thermal processors. Historically, this tool has been used extensively for a variety of silicon processing. With this simulation, the temperature uniformity of 100 mm Si3N4 encapsulated GaAs with a dual silicon implant anneal at 847°C, 40 s was optimized to <2°C across the wafer. Ramp rates ≤20°C/s were obtained without slip.
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Private Communication (1999).
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Farukhi, Z., Francz, H., Marcus, S. et al. Temperature Uniformity Optimization for a silicon implant anneal into GaAs using Opus ™ simulation software. J. Electron. Mater. 28, 1370–1375 (1999). https://doi.org/10.1007/s11664-999-0124-9
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DOI: https://doi.org/10.1007/s11664-999-0124-9