Abstract
Reliability of polyoxide grown by electron cyclotron resonance (ECR) N2O-plasma on heavily phosphorus-doped polysilicon has been investigated for the interpoly dielectrics (IPDs) of nonvolatile memories (NVMs). ECR N2O-plasma polyoxide grown on polysilicon with phosphorus of 1 × 1021 cm−3 exhibits a significantly high breakdown field of 10 MV/cm and low electron trapping rate of 0.5 V, which are regardless of phosphorus concentration. The improvements are attributed to the smooth polyoxide/polysilicon interface, low phosphorus concentration, and nitrogen-rich layer with strong silicon-nitrogen bonds at the polyoxide/polysilicon interface.
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Lee, Ni., Lee, JW. & Han, CH. Highly reliable ECR N2O-plasma polyoxide grown on heavily phosphorus-doped polysilicon films. J. Electron. Mater. 28, L31–L33 (1999). https://doi.org/10.1007/s11664-999-0144-5
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DOI: https://doi.org/10.1007/s11664-999-0144-5