Abstract
A computer-software, Emissivity, has been developed to calculate the emissivity (ɛ) of silicon wafers of any surface morphology, for a given temperature and dopant concentration. The software uses a combination of ray- and wave-optics approaches to include the interference and the polarization effects necessary for multilayer surface coatings and multi-reflections within thin wafers. The refractive index and the absorption coefficient are calculated as a function of temperature and dopant concentration using an empirical model for an indirect bandgap semiconductor. The results of this model are compared with conventional emissivity calculations and experimental data.
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Sopori, B., Chen, W., Madjdpour, J. et al. Calculation of emissivity of Si wafers. J. Electron. Mater. 28, 1385–1389 (1999). https://doi.org/10.1007/s11664-999-0126-7
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DOI: https://doi.org/10.1007/s11664-999-0126-7