Abstract
Bulk p-type wafers prepared with HF and RCA cleaning were oxidized in an atmospheric pressure O2 ambient with incandescent lamp heating. Minimal effective oxidation times of several seconds were obtained by rapidly heating wafers at rates up to 150°C/sec and then turning off lamp power just as the desired peak temperature is approached. Cooling rates vary up to about 80°C/sec. Film thicknesses obtained by this “spike” method increase from 1.5 nm for peak temperature of 1000°C to 3.5 nm for peak temperature of 1200°C. Oxidation kinetics was studied by varying processing time from a spike to a 20-s plateau. The activation energy is 2.5 eV for 1.5 nm to 5.0 nm films. Film thickness uniformity under 1% at one standard deviation over 150 mm wafers, equivalent to 2.5°C temperature variation, was obtained for spike oxidation by optimizing relative power ratios to the lamps. Measurements on blanket oxidized wafers by ellipsometry and corona-charge Kelvin surface photovoltage techniques indicate equivalent physical properties over the range of oxidation times.
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Fiory, A.T. Thin SiO2 films grown for brief oxidation times. J. Electron. Mater. 28, 1358–1364 (1999). https://doi.org/10.1007/s11664-999-0122-y
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DOI: https://doi.org/10.1007/s11664-999-0122-y