1. Doping and processing epitaxial Ge_xSi_1−x films on Si(100) by ion implantation for Si-based heterojunction devices applications

   • D. Y. C. Lie

   Review Pages: 377 - 401

2. Ohmic contacts formation of silicon schottky diodes by screen printing and rapid isothermal processing

   • D. Ratakonda
   • R. Singh
   • S. Narayanan

   Regular Issue Paper Pages: 402 - 404

3. Epitaxial growth and characterization of DyP/GaAs, DyAs/GaAs, and GaAs/DyP/GaAs heterostructures

   • P. P. Lee
   • R. J. Hwu
   • M. C. Wood

   Regular Issue Paper Pages: 405 - 408

4. Structural and optical properties of Ga_xIn_1−xP layers grown by chemical beam epitaxy

   • Tae-Yeon Seong
   • Jung-Ja Yang
   • Phil W. Yu

   Regular Issue Paper Pages: 409 - 413

5. Formation of InSb quantum dots in a GaSb matrix

   • A. F. Tsatsul’Nikov
   • S. V. Ivanov
   • Zh. I. Alferov

   Regular Issue Paper Pages: 414 - 417

6. Analysis of the stress and interfacial reactions in Pt/Ti/SiO₂/Si for use with ferroelectric thin films

   • Lynnette D. Madsen
   • Louise Weaver
   • Alison J. Clark

   Regular Issue Paper Pages: 418 - 426

7. Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix

   • S. Rouvimov
   • Z. Liliental-Weber
   • S. Noda

   Regular Issue Paper Pages: 427 - 432

8. Cu-In-Ga-Se nanoparticle colloids as spray deposition precursors for Cu(In, Ga)Se₂ solar cell materials

   • Douglas L. Schulz
   • Calvin J. Curtis
   • David S. Ginley

   Regular Issue Paper Pages: 433 - 437

9. Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers

   • Nugraha
   • Wataru Tamura
   • Junichi Nishizawa

   Regular Issue Paper Pages: 438 - 441

10. Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors

    • J. Garcia
    • C. Dua
    • D. Pavlidis

    Regular Issue Paper Pages: 442 - 445

11. Selective area epitaxy of GaAs using tri-isopropylgallium

    • Ruth Zhang
    • Raymond Tsui
    • John Tresek

    Regular Issue Paper Pages: 446 - 450

12. Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing

    • K. Kuriyama
    • K. Ushiyama
    • K. Yokoyama

    Regular Issue Paper Pages: 462 - 465

13. Morphology and defect structures of GaSb islands on GaAs grown by metalorganic vapor phase epitaxy

    • Joon-Hyung Kim
    • Tae-Yeon Seong
    • P. J. Walker

    Regular Issue Paper Pages: 466 - 471

14. Antisite arsenic incorporation in the low temperature MBE of gallium arsenide: Physics and modeling

    • S. Muthuvenkatraman
    • Suresh Gorantla
    • Donald L. Dorsey

    Regular Issue Paper Pages: 472 - 478

15. Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS

    • D. P. Docter
    • J. P. Ibbetson
    • D. E. Grider

    Regular Issue Paper Pages: 479 - 483

16. Composition and temperature dependence of the direct band gap of GaAs_1−xN_x (0≤x≤0.0232) using contactless electroreflectance

    • L. Malikova
    • Fred H. Pollak
    • RAJ Bhat

    Regular Issue Paper Pages: 484 - 487

17. Photoelectrochemical Capacitance-Voltage Measurements in GaN

    • C. E. Stutz
    • M. Mack
    • D. C. Look

    Letters Pages: L26 - L28

18. On the Determination of Charge Profiles in Epitaxial Layers of ZnSe by Capacitance Measurements

    • M. Germain
    • R. Evrard
    • M. Heuken

    Letters Pages: L29 - L31

19. Wet Etching of (0001) GaN/Al₂O₃ grown by MOVPE

    • B. J. Kim
    • J. W. Lee
    • T. I. Kim

    Letters Pages: L32 - L34

20. Hydrogen Induced Yellow Luminescence in GaN Grown by Halide Vapor Phase Epitaxy

    • R. Zhang
    • T. F. Kuech

    Letters Pages: L35 - L39