Abstract
H3PO4, NaOH, and KOH solutions are found to be useful for removing nitrogen depleted layers or damage induced by high temperature annealing or dry etching of metalorganic chemical vapor deposition-grown (0001)GaN/Al2O3. Solutions are selective to the (0001)plane of GaN. However, certain flat planes etched without etch pits are exposed by wet etching.
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Kim, B.J., Lee, J.W., Park, H.S. et al. Wet Etching of (0001) GaN/Al2O3 grown by MOVPE. J. Electron. Mater. 27, L32–L34 (1998). https://doi.org/10.1007/s11664-998-0184-2
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DOI: https://doi.org/10.1007/s11664-998-0184-2