Abstract
The composition and temperature dependence (20K<T<380K) of the direct gap, E0, of a series of GaAs1−xNx/GaAs (0≤x≤0.0232) samples has been measured using contactless electroreflectance. Our results for the composition dependence of E0 are different in relation to a recent experiment [W.G. Bi and C.W Tu, Appl. Phys. Lett. 70, 1608 (1997)]. In contrast to previously reported results, we find that the temperature dependence of the direct gap is in fact dependent on N composition and that the parameters which describe the temperature dependence of the band gap lie between those of GaAs and GaN.
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M. Weyers, M. Sato and H. Ando, Jpn. J. Appl. Phys. 31, L853 (1992).
W.G. Bi and C.W. Tu, Appl. Phys. Lett. 70, 1608 (1997).
S. Miyoshi, H. Yaguchi, K. Onabe, R. Ito and Y. Shiraki, Appl. Phys Lett. 63, 3506 (1993).
W.G. Bi and C.W. Tu, Appl. Phys. Lett. 69, 3710 (1996).
M. Kondow et al., Ext. Abs. 1995 Int. Conf. Solid State Devices and Materials, Osaka, 1995, p. 1016.
F.H. Pollak and H. Shen, Mater. Sci. and Eng. R10, 275 (1993).
R. Bhat, M.A. Koza, J. Crawley, V. Saywell and J. Hennesey, Sixth European Workshop on Metalorganic Vapor Phase Epitaxy and Related Growth Techniques, Gent, Belgium, 1995, paper E-9; X. Zhang, I. Moerman, C. Sys, P. Demeester, J.A. Crawley and E.J. Thrush, J. Cryst. Growth 170, 83 (1997).
C. Bocchi, C. Ferrari, P. Franzosi, G. Forrnuto, S. Pellegrino and F. Taiariol, J. Electron. Mater. 16, 245 (1987).
M. Sato, J. Cryst. Growth 145, 99 (1994).
M. Kondow, K. Uomi, K. Hosomi and T. Mozume, Jpn. J. Appl. Phys. 33, L1056 (1994).
See, for example, F.H. Pollak, Phonons in Semiconductor Nanostructures, ed., J.-P. LeBurton, J. Pasqual and C.M. Sotomayor Torres (Dordrecht: Kluwer, 1993), p. 341.
H. Shen and F.H. Pollak, Phys. Rev. B 42, 7097 (1990).
Y.P. Varshni, Phys. (Utrecht) 34, 149 (1967).
P. Lautenschlager, M. Garriga, S. Logothetidis and M. Cardona, Phys. Rev. B 35, 9174 (1987).
H. Shen, S.H. Pan, Z. Hang, J. Leng, F.H. Pollak, J.M. Woodall and R.N. Saks, Appl. Phys. Lett. 53, 1080 (1988).
F.H. Pollak, Properties of Aluminum Gallium Arsenide, ed. S. Adachi (London: INSPEC, 1993), p. 79.
G. Ramírez-Flores, H. Navarro-Contrersa, A. Lastraz-Martinez, R.C. Powell and J.E. Greene, Phys. Rev. B 50, 8433 (1994).
C.F. Li, Y.S. Huang, L. Malikova and F.H. Pollak, Phys. Rev. B 55, 9251 (1997).
Numerical Data and Functional Relationships in Science and Technology, ed. O. Madelung and M. Schulz, Landolt-Bornstein, New Series, Group III, Vol. 22a (New York: Springer, 1987).
See, for example, E.O. Kane, Semiconductors and Semimetals, ed. by R.K. Willardson and A.C. Beer (New York: Academic, 1966), p. 21.
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Malikova, L., Pollak, F.H. & Bhat, R. Composition and temperature dependence of the direct band gap of GaAs1−xNx (0≤x≤0.0232) using contactless electroreflectance. J. Electron. Mater. 27, 484–487 (1998). https://doi.org/10.1007/s11664-998-0181-5
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DOI: https://doi.org/10.1007/s11664-998-0181-5