Skip to main content
SpringerLink
Log in

Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing

  • Regular Issue Paper
  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The uniformity of deep levels in semi-insulating InP wafers, which have been obtained by multiple-step wafer annealing under phosphorus vapor pressure, was studied using the thermally stimulated current (TSC) and photoluminescence (PL) methods. Only three traps related to Fe, T0 (ionization energy Ei=0.19 eV), T1 (0.25 eV), and T2 (0.33 eV), probably forming complex defects, were observed in the wafer and they exhibited a relatively uniform distribution. PL spectra relating to phosphorus vacancies observed in some regions of the wafer are correlated with a small TSC signal having an ionization energy of 0.43 eV.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. D.E. Holms, R.G. Wilson and P.W. Yu, J. Appl. Phys. 52, 3396 (1981).

    Article  Google Scholar 

  2. C. Blaauw, B. Emmerstorfer, R.A. Bruce and M. Benzaquen, Semi-insulating III- V Materials, Toronto, ed. A. Milnes and C.J. Miner (Bristol, U.K.: Hilger, 1990), p. 137.

    Google Scholar 

  3. C. Miner, D.G. Knight, J.M. Zorzi, R.W. Streater, N. Puetz and M. Ikisawa, Inst. Phys. Conf. Ser. 135 (Bristol, U.K.: Inst. of Phys., 1994), p. 181.

    Google Scholar 

  4. M. Uchida, K. Kainosho, M. Ohta and O. Oda, Proc. 8th Intl. Conf. on InP and Related Materials (New York: IEEE, Schwabisch Gmund, 1996) Catalog #96CH35930, p. 43.

    Book  Google Scholar 

  5. K. Kuriyama, K. Yokoyama and A. Satoh, Appl. Phys. Lett. 59, 1326 (1991); K. Kuriyama, K. Tomizawa, K. Koga, N. Hayashi, H. Watanabe, Y. Ikeda and H. Maekawa, ibid. 63, 1966 (1993).

    Article  CAS  Google Scholar 

  6. K. Kuriyama, K. Yokoyama, K. Tomizawa, T. Takeuchi and H. Takahashi, Appl. Phys. Lett. 61, 843 (1992).

    Article  CAS  Google Scholar 

  7. D.C. Look, Semiconductors and Semimetals 19, 75 (1983).

    Article  CAS  Google Scholar 

  8. K. Kuriyama, K. Tomizawa, M. Kashiwakura and K. Yokoyama, J. Appl. Phys. 76, 3552 (1994).

    Article  CAS  Google Scholar 

  9. Z.-Q. Fang, D.C. Look and J.H. Zhao, Proc. 4th Intl. Conf. on InP and Related Materials (New York: IEEE, 1992) Catalog #92CH3104-7, p. 634; Z.-Q. Fang, D. C. Look and J.H. Zhao, Appl. Phys. Lett. 61, 589 (1992).

    Google Scholar 

  10. G. Hirt, T. Mono and G. Müller, Mater. Sci. Eng. B 28, 101 (1994).

    Article  CAS  Google Scholar 

  11. G. Marrakchi, K. Cherkaoui, A. Karoui, G. Hirt and G. Müller, J. Appl. Phys. 79, 6947 (1996).

    Article  CAS  Google Scholar 

  12. T. Inoue, H. Shimakura, K. Kainosho, R. Hirano and O. Oda, J. Electrochem. Soc. 137, 1283 (1990); T. Inoue, K. Kainosho, R. Hirano, H. Shimakura, T. Kanazawa and O. Oda, J. Appl. Phys. 67, 7165 (1990).

    Article  CAS  Google Scholar 

  13. M.J. Puska, J. Phys. Condens. Mater. 1, 7347 (1989).

    Article  CAS  Google Scholar 

  14. H. Xu, Phys. Rev. B 42, 11295 (1990).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. College of Engineering and Research Center of lon Beam Technology, Hosei University, Koganei, 184, Tokyo, Japan

    K. Kuriyama, K. Ushiyama & T. Tsunoda

  2. Materials and Components Laboratory, Japan Energy, Toda, 335, Saitama, Japan

    M. Uchida & K. Yokoyama

Authors
  1. K. Kuriyama
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. K. Ushiyama
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Tsunoda
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. Uchida
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. K. Yokoyama
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kuriyama, K., Ushiyama, K., Tsunoda, T. et al. Uniformity of deep levels in semi-insulating InP obtained by multiple-step wafer annealing. J. Electron. Mater. 27, 462–465 (1998). https://doi.org/10.1007/s11664-998-0177-1

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-998-0177-1

Key words

Search

Navigation