Abstract
Using secondary ion mass spectrometry (SIMS), we have investigated the excess group V content in GaAs and InP films grown by molecular beam epitaxy at low temperature. Using the inherent depth profiling capability of SIMS, we investigated the V/III ratio in films grown at nominally constant temperatures and also in films grown with stepped temperature profiles. Thickness profiles of the V/III ratio show the effects of intentional temperature changes and of an unintentional drift in the actual substrate temperature during growth. The ability to measure as little as 0.1% excess As and about 0.2% excess P indicates excellent measurement resolution. SIMS analysis is also used to identify a narrow growth temperature range over which InP can be grown with appreciable nonstoichiometry yet remain monocrystalline.
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Docter, D.P., Ibbetson, J.P., Gao, Y. et al. Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS. J. Electron. Mater. 27, 479–483 (1998). https://doi.org/10.1007/s11664-998-0180-6
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DOI: https://doi.org/10.1007/s11664-998-0180-6