Abstract
We have studied the selective area epitaxy of GaAs by chemical beam epitaxy, using tri-isopropylgallium as the Ga source. The results show that GaAs can be selectively grown at a rate of up to ∼0.36 µm/h on patterned GaAs substrates at temperatures as low as 380°C. A low selective growth temperature allows us to utilize deep-ultraviolet radiation to modify the GaAs surface oxides for use as the masking material. We found that excess AsH3 over-pressure degrades the selectivity significantly, and the maximum selective growth thickness is limited by a critical total adatom coverage on the mask. In addition, the low selective growth temperature does not result in a very high C background concentration. Initial Hall measurements indicate that unintentional C doping levels are at least two orders of magnitude lower than those in GaAs layers grown under comparable conditions using trimethylgallium.
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F. Alexandre, D. Zerguine, P. Launay, J. L. Benchimol, M. Bertz, B. Sermage, D. Komatitsch and M. Juhel, J. Cryst. Growth 136, 235 (1994).
Y. Hiratani, Y. Ohki, Y. Sugimoto and K. Akita, J. Cryst. Growth 111, 570 (1991).
P. Legay, F. Alexandre, M. Nunez, J. Sapriel, D. Zerguine and J.L. Benchimol, J. Cryst. Growth 148, 211 (1995).
E. Tokumitsu, Y. Kudo, M. Konagai and K. Takahaski, J. Appl. Phys. 55, 3163 (1984).
S. Yoshida and M. Sasaki, J. Cryst. Growth 150, 557 (1995).
P.A. Lane, T. Martin, R.W. Freer, P.D.J. Calcott, C.R. Whitehouse, A.C. Jones and S. Rushworth, Appl. Phys. Lett. 60, 285 (1992).
T.J. Whitaker, T. Martin and R.W. Freer, J. Cryst. Growth 164, 296 (1996).
K. Shiralagi, R. Tsui and H. Goronkin, Paper W10, 39th Electronic Materials Conf., Fort Collins, CO, June, 1997. Also submitted to Appl. Phys. Lett.
Y. Hiratani, M. Sasaki, S. Yoshida and M. Yamada, J. Cryst. Growth 150, 404 (1995).
R.W. Freer, T. Martin, P.A. Lane, C.R. Whitehouse, R. Hogan, J.S. Foord and A.C. Jones, J. Cryst. Growth 127 152 (1993).
C.R. Abernathy, P.W. Wish, S.J. Pearton, F. Ren, D.A. Bohling and G.T. Muhr, J. Cryst. Growth 124, 64 (1992).
K. Aketagawa, T. Tatsumi and J. Sakai, J. Cryst. Growth 111, 860 (1991).
H. Wado, T. Shimizu, S. Ogura, M. Ishida and T. Nakamura, J. Cryst. Growth 150, 969 (1995).
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Zhang, R., Tsui, R., Shiralagi, K. et al. Selective area epitaxy of GaAs using tri-isopropylgallium. J. Electron. Mater. 27, 446–450 (1998). https://doi.org/10.1007/s11664-998-0176-2
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DOI: https://doi.org/10.1007/s11664-998-0176-2