1. Foreword

   EditorialNotes Pages: 325 - 325

2. Crystal anomaly at the center of S doped InP wafers grown by the LEC method

   • Y. Iguchi
   • T. Iwasaki
   • N. Yamabayashi

   OriginalPaper Pages: 327 - 330

3. Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm⁻¹ hydrogen related line

   • F. X. Zach
   • E. E. Haller
   • D. F. Bliss

   OriginalPaper Pages: 331 - 335

4. Fine structures of residual strain distribution in Fe-Doped lnP-100) wafers grown by the LEC and VCZ methods

   • Masayuki Fukuzawa
   • Masayoshi Yamada

   OriginalPaper Pages: 337 - 342

5. Study on microscopic defects in Fe-Doped InP single crystals

   • K. Kohiro
   • R. Hirano
   • O. Oda

   OriginalPaper Pages: 343 - 346

6. Reduction of dislocation densities in InP single crystals by the LEC method using thermal baffles

   • R. Hirano
   • M. Uchida

   OriginalPaper Pages: 347 - 351

7. Effect of annealing conditions on the uniformity of undoped Semi-Insulating InP

   • K. Kainosho
   • M. Ohta
   • O. Oda

   OriginalPaper Pages: 353 - 356

8. Multicomponent zone melting growth of ternary InGaAs bulk crystal

   • T. Suzuki
   • K. Nakajima
   • T. Katoh

   OriginalPaper Pages: 357 - 361

9. Mesoscopic nonuniformity of wafer-annealed semi-insulating InP

   • G. Hirt
   • D. Wolf
   • G. MÜller

   OriginalPaper Pages: 363 - 367

10. Improved selective growth of InP around dry-etched mesas by metalorganic chemical vapor deposition at low growth temperature

    • M. Takemi
    • T. Kimura
    • S. Takamiya

    OriginalPaper Pages: 369 - 374

11. InAIGaAs selective MOVPE growth with bandgap energy shift

    • T. Takeuchi
    • M. Tsuji
    • K. Taguchi

    OriginalPaper Pages: 375 - 378

12. Properties of lnAs_xP_1-x layer formed by P-As exchange reaction on (001)lnP surface exposed to As₄ beam

    • B. X. Yang
    • L. He
    • H. Hasegawa

    OriginalPaper Pages: 379 - 384

13. MOVPE growth of strained InGaAs/lnAIAs MQWs for a polarization-insensitive electroabsorption modulator

    • S. Kondo
    • K. Wakita
    • K. Nakashima

    OriginalPaper Pages: 385 - 388

14. Temporally resolved selective regrowth of InP around [110] and [-110] mesas

    • S. Lourdudoss
    • E. Rodríguez Messmer
    • G. Landgren

    OriginalPaper Pages: 389 - 394

15. Structural and optical characterization of InP/GalnP islands grown by solid-source MBE

    • A. Kurtenbach
    • C. Ulrich
    • F. Phillipp

    OriginalPaper Pages: 395 - 400

16. Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

    • Y. Sakata
    • T. Nakamura
    • H. Hasumi

    OriginalPaper Pages: 401 - 406

17. High-Mobility Ga_0.47ln_0.53As/lnP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium

    • M. Usuda
    • K. Sato
    • T. Udagawa

    OriginalPaper Pages: 407 - 409

18. Selective growth of InP by MOCVD around dry-etched mesas having various patterns for photonic integrated circuits

    • K. Goto
    • M. Takemi
    • Y. Mihashi

    OriginalPaper Pages: 411 - 414

19. AIGaAsSb Buffer/Barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability

    • S. Miya
    • S. Muramatsu
    • I. Shibasaki

    OriginalPaper Pages: 415 - 420

20. Selective area growth of InP by plasma assisted solid-source epitaxy

    • I. Aller
    • H. L. Hartnagel

    OriginalPaper Pages: 421 - 424

21. Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates

    • Toshihiro Morita
    • Akihiko Kikuchi
    • Katsumi Kishino

    OriginalPaper Pages: 425 - 430

22. Self-organization phenomenon of strained InGaAs on InP (311) substrates grown by metalorganic vapor phase epitaxy

    • Jiro Temmyo
    • Atsuo Kozen
    • Hideki Hasegawa

    OriginalPaper Pages: 431 - 437

23. Growth mode transition processes in a GaAs/lnP system studied by scanning tunneling microscopy

    • Shunsuke Ohkouchi
    • Nobuyuki Ikoma
    • Masao Tamura

    OriginalPaper Pages: 439 - 441

24. Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)

    • H. Protzmann
    • Z. Spika
    • J. Lorberth

    OriginalPaper Pages: 443 - 448

25. Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCI₄

    • Kyushik Hong
    • Dimitris Pavlidis

    OriginalPaper Pages: 449 - 455

26. Highly controlled lnGaAs(P)/lnP MQW interfaces grown by MOVPE using TBA and TBP precursors

    • T. Nakamura
    • S. Ae
    • T. Uji

    OriginalPaper Pages: 457 - 461

27. Chlorine auto-doping by chloride vapor phase epitaxial growth of InP

    • T. Iwasaki
    • Y. Iguchi
    • S. Yoneyama

    OriginalPaper Pages: 463 - 466

28. Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy

    • S. Sethi
    • P. K. Bhattacharya

    OriginalPaper Pages: 467 - 477

29. Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the In_xGa_{1- x}As/GaAs system

    • J. Pamulapati
    • P. K. Bhattacharya
    • R. L. Tober

    OriginalPaper Pages: 479 - 483

30. LP-MOCVD grown (lnAs)_m(GaAs)_m short period superlattices on InP

    • Dae Kon Oh
    • Kyung Soo Suh
    • Sahn Nahm

    OriginalPaper Pages: 485 - 489

31. OMVPE grown GalnAs: C for HBTs

    • C. Caneau
    • R. Bhat
    • M. A. Koza

    OriginalPaper Pages: 491 - 495

32. Interband magneto-absorption in narrow-gap HgTe/CdTe superlattice structures

    • R. Sizmann
    • P. Helgesen
    • S. Løvold

    OriginalPaper Pages: 497 - 500

33. Current-voltage characteristics and X- ray diffraction study of Pd/Si_{1- x}Ge_x schottky contacts

    • L. He
    • Z. Q. Shi
    • Y. D. Zheng

    OriginalPaper Pages: 501 - 505

34. Hydrogen etching for semiconductor materials in plasma doping experiments

    • Shu Qin
    • James D. Bernstein
    • Chung Chan

    OriginalPaper Pages: 507 - 511

35. Investigation of strain-compensated lnGaAs(P)/lnGaAs(P)/lnP multiple quantum well structures grown by LP-MOVPE

    • Haiyan An
    • Shuren Yang
    • Shiyong Liu

    OriginalPaper Pages: 513 - 517

36. Deposition of InGaAsP alloys on GaAs by low pressure metalorganic vapor phase epitaxy: Theory and experiments

    • S. Pellegrino
    • L. Vitali

    OriginalPaper Pages: 519 - 525

37. High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

    • Veena Misra
    • Xiaoli Xu
    • Jimmie J. Wortman

    OriginalPaper Pages: 527 - 535

38. Surface passivation of lnP/ln_0.53Ga_0.47As heterojunction bipolar transistors for opto-electronic integration

    • Dong-Su Kim
    • Chih-Ping Chao
    • Stephen R. Forrest

    OriginalPaper Pages: 537 - 540

39. Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering

    • A. Pérez-Rodríguez
    • Y. Pacaud
    • J. R. Morante

    OriginalPaper Pages: 541 - 547

40. Noise investigation of ultraviolet laser induced grain structure in polyimide films

    • Z. Kocsis
    • Z. S. Kincses
    • I. Mojzes

    OriginalPaper Pages: 549 - 551