Abstract
The growth of heavily carbon dopedp-InGaAs (~6.5xl019cm-3) lattice-matched to InP is reported. Growth is achieved by low pressure metalorganic chemical vapor deposition (LP-MOCVD) using all methyl metalorganic sources and liquid CC14. The impact of growth temperature and CC14 flow rates on growth rate reduction and alloy compositional change was investigated. Post-growth isothermal and isochronal annealing experiments were performed on the carbon doped InGaAs layers and a quantitative analysis of carrier activation is presented using Hall and secondary ion mass spectroscopy measurements. Reduced self-compensation by carbon displacement from indium to arsenic site, as well as, reduced hydrogen passivation are suggested as possible mechanisms responsible for carrier activation upon thermal annealing.
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Hong, K., Pavlidis, D. Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCI4 . J. Electron. Mater. 25, 449–455 (1996). https://doi.org/10.1007/BF02666619
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DOI: https://doi.org/10.1007/BF02666619