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Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP

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Abstract

Selective metalorganic vapor phase epitaxial (MOVPE) growth of InGaAs(P) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) was systematically investigated for the first time. Selective growth was successfully achieved and the growth structure was as excellent as the structure using AsH3/PH3. Vapor phase lateral diffusion of group-III species, which is the major mechanism of selective MOVPE, can be easily controlled over the wide range of V/III ratio with using TBA/TBP. From this feature, we propose the selectively grown multiple quantum well waveguide structures which have excellent bandgap controllability by using TBA/TBP.

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Authors and Affiliations

  1. ULSI Device Development Laboratories, Japan

    Y. Sakata, Y. In0m0t0 & H. Hasumi

  2. KANSAI Electronics Research Laboratory, NEC Corporation, 2-9-1 Seiran, 520, Ohtsu, Shiga, Japan

    T. Nakamura, S. Ae, T. Terakado & T. Torikai

Authors
  1. Y. Sakata
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  2. T. Nakamura
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  3. S. Ae
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  4. T. Terakado
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  5. Y. In0m0t0
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  6. T. Torikai
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  7. H. Hasumi
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Sakata, Y., Nakamura, T., Ae, S. et al. Selective MOVPE growth of InGaAsP and InGaAs using TBA and TBP. J. Electron. Mater. 25, 401–406 (1996). https://doi.org/10.1007/BF02666610

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  • DOI: https://doi.org/10.1007/BF02666610

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